Thermoelectric Properties of Sb-Doped Ga2Te3 Alloy

被引：0
|
作者：
Fu Hong [1 ]
Ying Pengzhan
Cui Jiaolin [1 ]
Yan Yanming [1 ]
Zhang Xiaojun [1 ]
机构：
[1] Ningbo Univ Technol, Ningbo 315016, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2011年 / 40卷 / 05期
关键词：
Ga1.9Sb0.1Te3; microstructure; thermoelectric properties; GALLIUM;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sb element was substituted for Ga in the Ga2Te3 alloy with the same molar fraction and Ga(1.9)Sb(0.1)ATe(3) alloy was prepared by spark plasma sintering. The microstructure and the thermoelectric (TE) property of the alloy were investigated. Results show that after Se doping the Seebeck coefficient of the sample is about 130-240 mu V/K, much lower than that of single crystal Ga2Te3, and the electrical conductivity decreases from 3600 to 1740 Omega(-1).m(-1) with temperature elevation to 649 K, being at least 16 times higher than that of single crystal Ga2Te3 at the corresponding temperature. The thermal conductivity increases by about 25% after Sb doping. The maximum TE figure of merit (ZT) value of 0.1 is obtained at 649 K, which is approximately 3 times as large as that of single crystal Ga2Te3 at the corresponding temperature.
引用
收藏
页码：849 / 852
页数：4
相关论文
共 11 条
  • [1] GALLIUM-TELLURIUM SYSTEM - PHASE-DIAGRAMS, STRUCTURAL STUDY ON GATE, GA2TE5 AND GA6SNTE10
    ALAPINI, F
    FLAHAUT, J
    GUITTARD, M
    JAULMES, S
    JULIENPOUZOL, M
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1979, 28 (03) : 309 - 319
  • [2] CHEN DY, 2008, J FUNCTIONAL MAT, V39, P322
  • [3] Preparation and thermoelectric properties of p-type (Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x (x=0-0.2) alloys prepared by spark plasma sintering
    Cui, J. L.
    Xue, H. F.
    Xiu, W. J.
    [J]. INTERMETALLICS, 2007, 15 (11) : 1466 - 1470
  • [4] GAO M, 1996, CONVERSION APPL DIFF, P70
  • [5] THE STRUCTURE OF GA2TE3 - AN X-RAY AND HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY
    GUYMONT, M
    TOMAS, A
    GUITTARD, M
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 66 (01): : 133 - 139
  • [6] Measurement on gallium- and indium-compounds X Gallium and Indium chalcogenides
    Klemm, W
    von Vogel, HU
    [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1934, 219 (01): : 45 - 64
  • [7] Unexpectedly low thermal conductivity in natural nanostructured bulk Ga2Te3
    Kurosaki, Ken
    Matsumoto, Hideaki
    Charoenphakdee, Anek
    Yamanaka, Shinsuke
    Ishimaru, Manabu
    Hirotsu, Yoshihiko
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (01)
  • [8] Mukherjee A.K., 1980, B MATER SCI, V2, P55, DOI 10.1007/BF02748535
  • [9] VACANCY ORDERING OF GA2SE3 FILMS BY MOLECULAR-BEAM EPITAXY
    TERAGUCHI, N
    KATO, F
    KONAGAI, M
    TAKAHASHI, K
    NAKAMURA, Y
    OTSUKA, N
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (05) : 567 - 569
  • [10] Ordering and diffusion in II-VI/III-VI alloys with structural vacancies
    von Wensierski, H
    Weitze, D
    Leute, V
    [J]. SOLID STATE IONICS, 1997, 101 : 479 - 487
12