Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study

被引：10
|
作者：
Wu, K. [1 ,2 ]
Zhao, M. [1 ,3 ]
Yang, T. [1 ,2 ]
da Costa, Joao Guimaraes [1 ]
Liang, Z. [1 ,3 ]
Shi, X. [1 ,3 ]
机构：
[1] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China
来源：
JOURNAL OF INSTRUMENTATION | 2020年 / 15卷 / 03期
关键词：
Solid state detectors; Timing detectors; Charge transport and multiplication in solid media; Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; G-APDs; CCDs; EBCCDs; EMCCDs; CMOS imagers; etc); TECHNOLOGY;
D O I：
10.1088/1748-0221/15/03/C03008
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Low Gain Avalanche Detectors (LGAD) are silicon sensors with a time resolution better than 20 ps. The ATLAS and CMS experiments are designing LGAD detectors to address the pile-up challenge at the High Luminosity-Large Hadron Collider (HL-LHC). The Institute of High Energy Physics (IHEP) High-Granularity Timing Detector group has recently developed its first version of LGAD sensors. The LGAD structure was designed using Technology Computer-Aided Design (TCAD) simulations and optimized to obtain a high breakdown voltage and ideal gain. The n-type Junction Termination Extension (N-JTE) zone is a critical structure to guarantee a high breakdown voltage. The gain layer is optimized for an ideal gain factor and hence good time resolution. The optimized LGAD sensor has a gain higher than six and a breakdown voltage higher than 400V.
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页数：13
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