CdTe as a passivating layer in CdTe/HgCdTe heterostructures

被引：3
|
作者：
Virt, I. S. [1 ]
Kurilo, I. V. [2 ]
Rudyi, I. A. [2 ]
Sizov, F. F. [3 ]
Mikhailov, N. N. [4 ]
Smirnov, R. N. [4 ]
机构：
[1] Drogobych State Pedag Univ, UA-82100 Drogobych, Ukraine
[2] Lviv Polytech Natl Univ, UA-79013 Lvov, Ukraine
[3] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
[4] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 07期
关键词：
D O I：
10.1134/S106378260807004X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
CdTe/Hg1 - x Cd (x) Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg1 - x Cd (x) Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg1 - x Cd (x) Te films are reported.
引用
收藏
页码：772 / 776
页数：5
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