30-GHz Co-designed Low-Noise Amplifier and Antenna-on-Chip for Wireless Applications

被引：95
|
作者：
Chen, Zhe [1 ]
Liu, Qiang [1 ]
Smolders, Bart [1 ]
Baltus, Peter [1 ]
Gao, Hao [1 ]
机构：
[1] Eindhoven Univ Technol, Eindhoven, Netherlands
来源：
2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019) | 2019年
基金：
欧盟地平线“2020”;
关键词：
co-design; low-noise amplifier (LNA); millimeter wave (mm-wave); antenna-on-chip (AoC);
D O I：
10.1109/rfit.2019.8929159
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 30-GHz co-design of a 28-dB high-gain low-noise amplifier (LNA) and a 54% high-efficiency monopole antenna-on-chip for 5G wireless applications. The LNA design is based on a two-stage differential cascode structure with inductive degeneration. The antenna design is a modified monopole structure to maximize the radiation efficiency. Both parts are integrated directly on the same silicon chip in a 0.25 mu m SiGe BiCMOS technology. A co-design method is proposed according to various considerations and a compact matching network is implemented to achieve the optimal power and noise matching. The measurement results show a total gain of 27 dB of the complete system.
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页数：3
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