Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers

被引：2

作者：

Glowienka, D. ^{[1
]}

Szmytkowski, J. ^{[1
]}

机构：

[1] Gdansk Univ Technol, Fac Appl Phys & Math, G Narutowicza 11-12, PL-80233 Gdansk, Poland

来源：

ACTA PHYSICA POLONICA A | 2017年 / 132卷 / 02期

关键词：

HETEROJUNCTION SOLAR-CELLS; RECOMBINATION;

D O I：

10.12693/APhysPolA.132.397

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.

引用

页码：397 / 400

页数：4

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