Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroism

被引:2
|
作者
Sarigiannidou, E.
Monroy, E.
Bellet-Amalric, E.
Mariette, H.
Galera, R. M.
Cibert, J.
Wilhelm, F.
Rogalev, A.
机构
[1] Univ Grenoble 1, CEA, CNRS, Lab Spectrometrie Phys, F-38054 Grenoble 9, France
[2] CEA, DRFMC, SP2M, PSC, F-38054 Grenoble 9, France
[3] CNRS, Lab Louis Neel, F-38042 Grenoble, France
[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France
关键词
diluted magnetic semiconductors; molecular beam epitaxy; III-V semiconductors; X-ray magnetic circular dichroisin;
D O I
10.1016/j.spmi.2006.09.019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on the optimization of the growth conditions of wurtzite GaMnN grown by plasma-assisted molecular beam epitaxy in order to obtain intrinsic ferromagnetic behavior. By growing with a Ga/N ratio lower than unity and by introduction of periodic growth interruptions, we succeed in synthesizing single-phase GaMnN epilayers containing up to 6.3 at.% of Mn. The structural quality of the GaMnN epilayer and the absence of secondary phases are demonstrated by means of X-ray diffraction experiments and X-ray linear dichroism measurements performed at the Mn and Ga K-edges. The intrinsic ferromagnetism for 6.3 at.% of Mn in our GaMnN epilayer is demonstrated by means of magnetization measurements in a 5 T Quantum Design superconducting quantum interference device (SQUID) and X-ray magnetic circular dichroism investigations performed at the K-edge of Mn. The Curie temperature thus determined is equal to 8 K and a spontaneous magnetic moment of 2.4 mu(B) per Mn atom is found at 2 K. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:239 / 245
页数:7
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