High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

被引:289
|
作者
Zhao, Weisheng [1 ,2 ]
Chappert, Claude [1 ,2 ]
Javerliac, Virgile [3 ]
Noziere, Jean-Pierre [3 ]
机构
[1] CNRS, IEF, F-91405 Orsay, France
[2] Univ Paris Sud, UMR 8622, F-91405 Orsay, France
[3] Crocus Technol, F-38025 Grenoble, France
关键词
MTJ; non-volatile; low power; high speed; high reliability and MTJ/CMOS hybrid logic; DEVICES; MEMORY;
D O I
10.1109/TMAG.2009.2024325
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered as one potentially powerful solution to bring non volatility, instant on/off and low standby power in today's programmable logic circuits, in order to overcome major drawbacks while preserving high operation speed. A critical issue in this process is the integration of MTJ electric signal to CMOS electronics, in particular the requirement of "zero" read/write error for logic applications. In this paper, we propose a new sense amplifier circuit, called Pre-Charge Sense Amplifier (PCSA). This circuit, comprising 7 CMOS transistors at minimum size, is able to read the magnetic configuration of a pair of magnetic tunnel junctions with opposite configurations at high speed (about 200 ps), with very low power and error rate compared to previously proposed solutions. Simulations using a ST Microelectronics 90 nm design kit and a compact model of MTJ demonstrate the performances of PCSA.
引用
收藏
页码:3784 / 3787
页数:4
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