Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

被引：7
|
作者：
Seok, Jun Yeong [1 ,2 ]
Kim, Gun Hwan [1 ,2 ]
Kim, Jeong Hwan [1 ,2 ]
Kim, Un Ki [1 ,2 ]
Chung, Yoon Jang [1 ,2 ]
Song, Seul Ji [1 ,2 ]
Yoon, Jung Ho [1 ,2 ]
Yoon, Kyung Jin [1 ,2 ]
Lee, Min Hwan [1 ,2 ]
Kim, Kyung Min [1 ,2 ]
Hwang, Cheol Seong [1 ,2 ]
机构：
[1] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
Nonvolatile memory; resistive switching random access memory (ReRAM);
D O I：
10.1109/LED.2011.2182175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resistance switching behaviors in a Pt/In2Ga2ZnO7 (IGZO)/TiO2/Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.
引用
收藏
页码：582 / 584
页数：3
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