Integration of organic electrochemical transistors and immuno-affinity membranes for label-free detection of interleukin-6 in the physiological concentration range through antibody-antigen recognition

被引:67
|
作者
Gentili, Denis [1 ]
D'Angelo, Pasquale [2 ]
Militano, Francesca [3 ]
Mazzei, Rosalinda [3 ]
Poerio, Teresa [3 ]
Brucale, Marco [1 ]
Tarabella, Giuseppe [2 ,4 ]
Bonetti, Simone [5 ]
Marasso, Simone L. [2 ,6 ]
Cocuzza, Matteo [2 ,6 ]
Giorno, Lidietta [3 ]
Iannotta, Salvatore [2 ]
Cavallini, Massimiliano [1 ]
机构
[1] CNR, ISMN, Via Gobetti 101, I-40129 Bologna, Italy
[2] CNR, IMEM, Parco Area Sci 37-A, I-43124 Parma, Italy
[3] CNR, ITM, Via Pietro Bucci 17-C, I-87036 Arcavacata Di Rende, Italy
[4] Camlin Italy Srl, Str Budellungo 2, I-43123 Parma, Italy
[5] CellDynam iSRL, Via P Gobetti 101, I-40129 Bologna, Italy
[6] Politecn Torino, Chilab Mat & Microsyst Lab, Dipartimento Sci Applicata & Tecnol DISAT, Via Lungo Piazza Armi 6, I-10034 Chivasso, Italy
关键词
SELF-ASSEMBLED MONOLAYERS; IMPEDANCE SPECTROSCOPY; CAPACITIVE BIOSENSOR; GOLD; SURFACES; ENZYME; FUNCTIONALIZATION; FABRICATION; MODULATION; ADSORPTION;
D O I
10.1039/c8tb01697f
中图分类号
TB3 [工程材料学]; R318.08 [生物材料学];
学科分类号
0805 ; 080501 ; 080502 ;
摘要
We demonstrate the label-free and selective detection of interleukin-6 (IL-6), a key cell-signaling molecule in biology and medicine, by integrating an OECT with an immuno-affinity regenerated cellulose membrane. The objective of the membrane is to increase the local concentration of IL-6 at the sensing electrode and, thereby, enhance the device response for concentrations falling within the physiological concentration range of cytokines. The OECT gate electrode is functionalized with an oligo(ethylene glycol)-terminated self-assembled alkanethiolate monolayer (SAM) for both the immobilization of anti IL-6 antibodies and the inhibition of non-specific biomolecule binding. The OECT gate/electrolyte interface is exploited for the selective detection of IL-6 through the monitoring of antigen-antibody binding events occurring at the gate electrode.
引用
收藏
页码:5400 / 5406
页数:7
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