Quantum mechanical effects on heat generation in nano-scale MOSFETs

被引：0
|
作者：
Ji Min [1 ]
Zhao Kai [1 ]
Du Gang [1 ]
Kang Jin-Feng [1 ]
Han Ru-Qi [1 ]
Liu Xiao-Yan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS B | 2008年 / 17卷 / 05期
关键词：
heat generation; quantum potential; collision broadening;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and K space on the heat generation is investigated.
引用
收藏
页码：1869 / 1873
页数：5
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