A MEMS-based infrared emitter array for combat identification

The silicon-based MEMS (MEMS: microelectromechanical systems) Infrared (IR) emitter arrays of 1x2, 2x2 and 3x3 elements are presented. The MEMS infrared emitters were fabricated on silicon-on-insulator (SOI) wafer. The resistively heated poly-silicon membrane fabricated by using deep reactive ion etching (DRIE) process on backside of SOI wafer make a low thermal mass structure, thus this IR-emitter can be modulated at high frequency. A heavily boron doping technology enable the supporting silicon layer to absorb the infrared radiation. As a result, the self-heating effect will reduce the power loss. By using the SOI wafer, the fabrication processes are simplified, and the production costs are decreased. In experiment, the surface temperature distribution of IR emitter arrays were measured by thermal imaging system, and the optical spectrum and modulation characteristics were measured by spectroradiometer. The measured results show that the IR emitter arrays exhibit a strong emission in middle infrared range, and the modulation frequency at 50% modulation depth is about 30Hz. The emitter arrays are expected to improve performance by using suspended membrane and sealed package structure. It is expected that the IR. emitter arrays can be used for increasing the visible intensity and distance in the application of infrared Combat Identification.