An on-chip, attofarad interconnect charge-based capacitance measurement (CBCM) technique

被引:64
|
作者
Chen, JC
McGaughy, BW
Sylvester, D
Hu, CM
机构
关键词
D O I
10.1109/IEDM.1996.553124
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a sensitive and simple technique for parasitic interconnect capacitance measurement with 0.01fF or 10 aF sensitivity is presented. This on-chip technique is based upon an efficient test structure design. No reference capacitor is needed. The measurement itself is also simple; only a DC current meter is required. We have applied this technique to extract various interconnect geometry capacitances, including the capacitance of a single Metal 2 over Metal 1 crossing, for an industrial double metal process.
引用
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页码:69 / 72
页数:4
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