Diode-pumped 1.4-w Tm3+:GdVO4 microchip laser at 1.9 μm

被引：32
|
作者：
Wyss, CP [1 ]
Luthy, W
Weber, HP
Vlasov, VI
Zavartsev, YD
Studenikin, PA
Zagumennyi, AI
Shcherbakov, IA
机构：
[1] Univ Bern, Inst Appl Phys, CH-3012 Bern, Switzerland
[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
crystal; diode pumping; GdVO4; laser; microchip; thulium;
D O I：
10.1109/3.736112
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GdVO4 as a host for thulium has several advantages for diode pumping in comparison with other crystals, The absorption cross section of thulium in GdVO4 is considerably stronger and broader than in YAG and YLF, and the spectrum is shifted closer to the emission wavelength of commercially available AlGaAs laser diodes. In our paper, we report on a diode-pumped monolithic Tm3+(6.9 at.%):GdVO4 microchip laser at 1.9 mu m A maximum output power of 1.4 W is achieved. Two different arrangements for cooling the crystal are discussed. Furthermore, the input-output curves under Ti:sapphire pumping are compared for different pump wavelengths, Slope efficiencies of 58%, clearly exceeding the Stokes limit of 41%, are achieved.
引用
收藏
页码：2380 / 2382
页数：3
相关论文
共 50 条
  • [1] Diode-pumped CW Tm:GdVO4 laser at 1.9 μm
    Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
    Chin. Opt. Lett., 2006, 3 (175-176):
  • [2] Diode-pumped CW Tm:GdVO4 laser at 1.9 μm
    李玉峰
    姚宝权
    王月珠
    Chinese Optics Letters, 2006, (03) : 175 - 176
  • [3] Performance of a Tm3+:GdVO4 microchip laser at 1.9 μm
    Univ of Bern, Bern, Switzerland
    Opt Commun, 1-3 (63-67):
  • [4] Performance of a Tm3+:GdVO4 microchip laser at 1.9 μm
    Wyss, CP
    Luthy, W
    Weber, HP
    Vlasov, VI
    Zavartsev, YD
    Studenikin, PA
    Zagumennyi, AI
    Shcherbakov, IA
    OPTICS COMMUNICATIONS, 1998, 153 (1-3) : 63 - 67
  • [5] Emission properties of a Tm3+:GdVO4 microchip laser at 1.9 μm
    Wyss, CP
    Luthy, W
    Weber, HP
    Vlasov, VI
    Zavartsev, YD
    Studenikin, PA
    Zagumennyi, AI
    Shcherbakov, IA
    APPLIED PHYSICS B-LASERS AND OPTICS, 1998, 67 (05): : 545 - 548
  • [6] Performance of a diode-pumped 5 W Nd3+:GdVO4 microchip laser at 1.06 μm
    C.P. Wyss
    W. Lüthy
    H.P. Weber
    V.I. Vlasov
    Y.D. Zavartsev
    P.A. Studenikin
    A.I. Zagumennyi
    I.A. Shcherbakov
    Applied Physics B, 1999, 68 : 659 - 661
  • [7] Performance of a diode-pumped 5 W Nd3+:GdVO4 microchip laser at 1.06 μm
    Institute of Applied Physics, University of Bern, Sidlerstrasse 5, CH-3012 Bern, Switzerland
    不详
    Appl Phys B, 4 (659-661):
  • [8] Widely tunable cw diode-pumped 1.9-μm Tm:GdVO4 laser at room temperature
    National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
    Chin. Phys. Lett., 2007, 3 (724-726):
  • [9] Widely tunable cw diode-pumped 1.9-μm Tm:GdVO4 laser at room temperature
    Li Yu-Feng
    Yao Bao-Quan
    Liu Yan-Mei
    Wang Yue-Zhu
    Ju You-Lun
    CHINESE PHYSICS LETTERS, 2007, 24 (03) : 724 - 726
  • [10] Performance of a diode-pumped 5W Nd3+:GdVO4 microchip laser at 1.06μm
    Wyss, CP
    Lüthy, W
    Weber, HP
    Vlasov, VI
    Zavartsev, YD
    Studenikin, PA
    Zagumennyi, AI
    Shcherbakov, IA
    APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 68 (04): : 659 - 661
12345