Synergy of plasma resistivity and electron viscosity in mediating double tearing modes in cylindrical plasmas
被引:3
|
作者:
He, Zhixiong
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机构:
SW Inst Phys, Chengdu, Peoples R China
Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
He, Zhixiong
[1
,2
]
Dong, J. Q.
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h-index: 0
机构:
SW Inst Phys, Chengdu, Peoples R China
Zhejiang Univ, Inst Fus Theory & Simulat, Hangzhou 310003, Zhejiang, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
Dong, J. Q.
[1
,3
]
He, H. D.
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h-index: 0
机构:
SW Inst Phys, Chengdu, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
He, H. D.
[1
]
Long, Y. X.
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机构:
SW Inst Phys, Chengdu, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
Long, Y. X.
[1
]
Mou, Z. Z.
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机构:
SW Inst Phys, Chengdu, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
Mou, Z. Z.
[1
]
Gao, Zhe
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h-index: 0
机构:
Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R ChinaSW Inst Phys, Chengdu, Peoples R China
Gao, Zhe
[2
]
机构:
[1] SW Inst Phys, Chengdu, Peoples R China
[2] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
[3] Zhejiang Univ, Inst Fus Theory & Simulat, Hangzhou 310003, Zhejiang, Peoples R China
INTERNAL TRANSPORT BARRIER;
NONLINEAR EVOLUTION;
GROWTH;
D O I:
10.1088/0031-8949/82/06/065507
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The linear behaviors of the double tearing mode (DTM) mediated by parallel electron viscosity and plasma resistivity in cylindrical plasmas with reversed magnetic shear and thus two resonant rational flux surfaces are numerically investigated in this paper. It is shown that DTMs mediated by electron viscosity alone behave similarly to the DTMs mediated by resistivity alone. DTMs mediated by electron viscosity are found to be enhanced by plasma resistivity, which is in such a range that the growth rate of the modes induced by the latter alone is comparable with that of the modes mediated by the former alone, and vice versa. Otherwise the growth rate of the modes is equal to the higher of the modes mediated by resistivity or electron viscosity alone when both resistivity and electron viscosity are taken into account. The enhancement is found to be closely related to the profiles of the stream function.