Research of sector split-drain MAGFET (structure and model) based on standard 0.6um N-well CMOS technology

被引：0

作者：

Zhu, DZ ^{[1
]}

Yao, YR ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Inst Microelect Technol, Hangzhou 310027, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new structure of sector split-drain MAGFET based on CSMC standard 0.6um N-well CMOS technology is suggested and its model is also developed. The relationship of its relative sensitivity with device geometry parameters is obtained by computer simulation. The maximum sensor sensitivity of 3.77%/T is obtained in experiment result with an offset value lower than 0.27%. Improvement of sensitivity is attributed to sector structure.

引用

页码：1711 / 1714

页数：4