Two-dimensional simulation of current self-distribution in oxide-confined vertical-cavity surface-emitting lasers

被引：0
|
作者：
Arias, J. [1 ]
Borruel, L. [2 ]
Romero, B. [3 ]
Esquivias, I. [2 ]
机构：
[1] Univ Miguel Hernandez, Dept Ciencia & Tecnol Mat, Avda Univ S-N, Elche 03202, Alicante, Spain
[2] Univ Politecn Madrid, Dpto Tecnol Foton, Madrid 28040, Spain
[3] Univ Rey Juan Carlos, Dpto Informait Estadist & Telemait, Mostoles 28933, Spain
来源：
2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2007年
关键词：
modeling; semiconductor lasers; vertical-cavity surface-emitting lasers;
D O I：
10.1109/SCED.2007.384008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.
引用
收藏
页码：119 / +
页数：2
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