Characteristics of SiC MOSFET in a Wide Temperature Range

被引：3
|
作者：
Zhu, Mengyu [1 ]
Wang, Laili [1 ]
Li, Huaqing [1 ]
Yang, Chengzi [1 ]
Ma, Dingkun [1 ]
Yang, Fengtao [1 ]
机构：
[1] Xi An Jiao Tong Univ, Coll Artificial Intelligence, Xian, Peoples R China
来源：
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021) | 2021年
关键词：
SiC MOSFET; SiC SBD; high temperature;
D O I：
10.1109/WIPDAASIA51810.2021.9656056
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25 degrees C to 425 degrees C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250 degrees C, the temperature-dependent static characteristics of SiC MOSFET are remeasured and nonlinearly characterized in a wide temperature range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on reliability of SiC MOSFET's body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.
引用
收藏
页码：79 / 82
页数：4
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