Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

被引：6

作者：

Nippert, Felix ^{[1
]}

Nirschl, Anna ^{[2
]}

Schulz, Tobias ^{[3
]}

Callsen, Gordon ^{[1
]}

Pietzonka, Ines ^{[2
]}

Westerkamp, Steffen ^{[1
]}

Kure, Thomas ^{[1
]}

Nenstiel, Christian ^{[1
]}

Strassburg, Martin ^{[2
]}

Albrecht, Martin ^{[3
]}

Hoffmann, Axel ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany

[2] OSRAM Opto Semicond GmbH, Leibnizstr 4, D-93055 Regensburg, Germany

[3] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 21期

关键词：

LIGHT-EMITTING-DIODES; INDIUM SEGREGATION; RECOMBINATION; DYNAMICS; FIELDS; BLUE;

D O I：

10.1063/1.4953254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage. Published by AIP Publishing.

引用

页数：6

共 5 条

[1] Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
Lepkowski, S. P.
Bardyszewski, W.
Rodak, D.
ACTA PHYSICA POLONICA A, 2014, 126 (05) : 1154 - 1155
[2] Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
Kaplar, RJ
Kurtz, SR
Koleske, DD
Fischer, AJ
JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 4905 - 4913
[3] Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells
Lepkowski, Slawomir P.
Anwar, Abdur Rehman
NANOMATERIALS, 2022, 12 (14)
[4] A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Chaudhuri, Reet
Bader, Samuel James
Chen, Zhen
Muller, David A.
Xing, Huili Grace
Jena, Debdeep
SCIENCE, 2019, 365 (6460) : 1454 - +
[5] Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier
Li, Chengguo
Liu, Hongfei
Chua, Soo Jin
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 77 : 127 - 130

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