Liquid phase diffusion bonding and thermoelectric properties of Pb1-xSnxTe compounds

被引:1
|
作者
Hashimoto, M [1 ]
Shiota, I [1 ]
Ohashi, O [1 ]
Isoda, Y [1 ]
Imai, Y [1 ]
Shinohara, Y [1 ]
Nishida, IA [1 ]
机构
[1] Natl Res Inst Met, STA, Tsukuba, Ibaraki 3050047, Japan
关键词
D O I
10.1109/ICT.1998.740391
中图分类号
O414.1 [热力学];
学科分类号
摘要
The solidified Pb1-xSnxTe compounds with different x were joined by liquid phase diffusion bonding technique in order to prepare the segmented thermoelectric materials which had a fundamental FGM (Functionally Graded Materials) structure [1]. The Pb1-xSnxTe compound is a p-type semiconductor whose carrier concentration increases with increasing x [2]. Therefore the maximum thermoelectric figure of merit of Pb1-xSnxTe shifted to a higher temperature with increasing x. A Sn sheet of 50 mu m thick was inserted between Pb1-xSnxTe compounds as soldering material, and the joining was performed under 2.0MPa at 700K for 1800s in Ar atmosphere. SEM observation revealed that the soldering material reacted with Pb1-xSnxTe to form a Sn-rich alloyed layer of less than 2 mu m in thickness. No remarkable increase in resistivity was observed in the vicinity of the interface. The joined material showed higher maximum power, P-max, than monolithic materials.
引用
收藏
页码:346 / 349
页数:4
相关论文
共 50 条
  • [1] DIFFUSION IN PB1-XSNXTE
    ZAITOV, FA
    GORSHKOV, AV
    SHALYAPINA, GM
    SUSOV, EV
    TEREKHOVICH, TF
    INORGANIC MATERIALS, 1979, 15 (11) : 1636 - 1637
  • [2] ANTIMONY DIFFUSION IN PB1-XSNXTE
    GULDI, RL
    ANTCLIFF.GA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : C241 - C241
  • [3] High-temperature thermoelectric properties of Pb1-xSnxTe:In
    Jovovic, Vladimir
    Thiagarajan, Suraj Joottu
    Heremans, Joseph P.
    Khokhlov, Dmitry
    Komissarova, Tanya
    Nicorici, Andrei
    THERMOELECTRIC POWER GENERATION, 2008, 1044 : 141 - +
  • [4] Structural, Electronic and Thermoelectric Properties of Pb1-xSnxTe Alloys
    Pandit, Abhiyan
    Haleoot, Raad
    Hamad, Bothina
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (01) : 586 - 592
  • [5] SWITCHING EFFECTS IN THE DIELECTRIC PHASE OF THE PB1-XSNXTE(IN) COMPOUNDS
    AKIMOV, BA
    BRANDT, NB
    KERNER, BS
    NIKIFOROV, VN
    CHUDINOV, SM
    SOLID STATE COMMUNICATIONS, 1982, 43 (01) : 31 - 33
  • [6] DIFFUSION OF LEAD FROM THE VAPOR-PHASE INTO PB1-XSNXTE
    GUTAKOVSKII, AK
    SABININA, IV
    SIDOROV, YG
    TIIS, SA
    INORGANIC MATERIALS, 1988, 24 (04) : 484 - 487
  • [7] High temperature thermoelectric properties evolution of Pb1-xSnxTe based alloys
    Ben-Ayoun, Dana
    Sadia, Yatir
    Gelbstein, Yaniv
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 722 : 33 - 38
  • [8] Thermoelectric properties of p-type in-doped Pb1-xSnxTe
    Gelbstein, Y.
    Daslievsky, Z.
    George, Y.
    Dariel, M. P.
    ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS, 2006, : 79 - +
  • [9] GROWTH OF PB1-XSNXTE BY LIQUID EPITAXY
    THOMPSON, AG
    WAGNER, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (05): : 918 - &
  • [10] Liquid-phase epitaxy of graded Pb1-xSnxTe layers
    Zhovnir, GI
    Tsarenko, ON
    Ryabets, SI
    INORGANIC MATERIALS, 1996, 32 (06) : 606 - 608