11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF Cj0

被引：0

作者：

Niu, Bin ^{[1
,2
]}

Fan, Daoyu ^{[1
,2
]}

Lin, Gang ^{[1
,2
]}

Dai, Kunpeng ^{[1
,2
]}

Lu, Hai-Yan ^{[1
,2
]}

Chen, Tangsheng ^{[1
,2
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Peoples R China

[2] Nanjing Chip Valley Ind Technol Inst, Nanjing 210016, Peoples R China

来源：

2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年

基金：

国家重点研发计划;

关键词：

GaAs; schottky barrier diode (SBD); Terahertz (THz); PERFORMANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its C-j0 scaled into sub-fF range. Scalling C- V measurement showed C-j0 without parasitic capacity reached 0.476fF for the 0.5 mu m anode diameter device. With the relative low series resistance Rs of 28.8 Omega, cutoff frequency f(t) reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.

引用

页数：3

共 18 条

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