Dual-Feedback GaN HEMT Oscillator

This paper designs a low-phase noise 5.2 GHz GaN HEMT oscillator with GaN-on-SiC HEMT foundry process of WIN semiconductors. The oscillator uses a dual-feedback technique, the first feedback uses a transformer coupling feedback and the second feedback uses a low-pass pi-filter feedback. The GaN oscillator uses buffer to characterize the oscillator performance. At the power 14.9 mW the oscillator generates a signal at 5.2 GHz. At 1MHz frequency offset from the carrier at 5.2 GHz the phase noise is -125.77 dBc/Hz, the figure of merit (FoM) of the proposed oscillator is -188 dBc/Hz. The dualfeedback oscillator uses a chip size of 2x1 mm(2).