Crystallographic influence on nanomechanics of ultra-thin silicon resonators

被引:0
|
作者
Wang, DF [1 ]
Ono, T [1 ]
Esashi, M [1 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of crystallographic orientations on nanomechanical properties of 50-nm-thick single crystalline silicon resonators was investigated by examining the effects of surface treatments, such as flash-heating and 02 adsorption on the mechanical quality factors (Q-factors) and resonant frequencies. Cantilevers with (100), (110) and (111) orientations were examined in this work. A 1500-mn-thick (100) cantilever array was also studied for comparison. The loss mechanisms in energy dissipation were discussed in terms of support loss, thermoelastic loss, as well as surface loss. The results obtained in this study provide an insight into the understanding of surface effects on nanomechanics of resonating elements, and provide design guidelines for future's nanoengineered devices for ultimate sensing.
引用
收藏
页码:336 / 339
页数:4
相关论文
共 50 条
  • [1] Crystallographic influence on nanomechanics of (100)-oriented silicon resonators
    Wang, DF
    Ono, T
    Esashi, M
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3189 - 3191
  • [2] Thermal treatments and gas adsorption influences on nanomechanics of ultra-thin silicon resonators for ultimate sensing
    Wang, DF
    Ono, T
    Esashi, M
    NANOTECHNOLOGY, 2004, 15 (12) : 1851 - 1854
  • [3] Approaching intrinsic performance in ultra-thin silicon nitride drum resonators
    Adiga, V. P.
    Ilic, B.
    Barton, R. A.
    Wilson-Rae, I.
    Craighead, H. G.
    Parpia, J. M.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)
  • [4] ULTRA-THIN STRIP SILICON DETECTORS
    AVDEICHIKOV, VV
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 313 (03): : 561 - 562
  • [5] Fracture and delamination of thin multilayers on ultra-thin silicon
    Kravchenko, G
    Bagdahn, J
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005, : 419 - 422
  • [6] Electrochemical study of ultra-thin silicon oxides
    Bertagna, V
    Erre, R
    Petitdidier, S
    Lévy, D
    Chemla, M
    CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING VII, PROCEEDINGS, 2002, 2002 (26): : 211 - 217
  • [7] Properties of ultra-thin thermal silicon nitride
    Buchheit, KM
    Takeuchi, H
    King, TJ
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 117 - 122
  • [8] Electrical conductivity of ultra-thin silicon nanowires
    Rochdi, Nabil
    Tonneau, Didier
    Jandard, Franck
    Dallaporta, Herve
    Safarov, Viatcheslav
    Gautier, Jacques
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (01): : 159 - 163
  • [9] Bendable Ultra-Thin Silicon Chips on Foil
    Dahiya, Ravinder S.
    Adami, Andrea
    Collini, Cristian
    Lorenzelli, Leandro
    2012 IEEE SENSORS PROCEEDINGS, 2012, : 231 - 234
  • [10] Automated handling of ultra-thin silicon wafers
    Schraub, FAT
    SOLID STATE TECHNOLOGY, 2002, 45 (09) : 59 - +