An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network

被引：18

作者：

Kucharski, Maciej ^{[1
,2
]}

Ng, Herman Jalli ^{[1
]}

Kissinger, Dietmar ^{[2
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[2] Univ Ulm, Inst Elect Devices & Circuits, Albert Einstein Allee 45, D-89081 Ulm, Germany

来源：

IEEE 45TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC 2019) | 2019年

关键词：

D-band; G-band; power amplifier (PA); power combining; radar; HIGH-GAIN;

D O I：

10.1109/esscirc.2019.8902847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology with f(T)/f(MAX)=300/500GHz. The PA achieves 30.2dB peak linear gain at 170 GHz and more than 27.2dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm saturated output power (P-SAT) with output referred 1 dB compression point (OP1dB) at 15.6 dBm, which to the best author's knowledge, are the highest among other previously reported silicon-based PAs above 140 GHz.

引用

页码：333 / 336

页数：4

共 10 条

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