Effect of charge bump on the series resistance and microwave properties of Si n+np+ IMPATT diode at X-band

被引：0

作者：

De, P ^{[1
]}

机构：

[1] Gobardanga Hindu Coll, Dept Phys, PO Khantura 743273, W Bengal, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2005年 / 43卷 / 10期

关键词：

series resistance; low-high-low; SDR; X-band; IMPATT diode;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The value of series resistance (R-s) of Si n(+)np(+) IMPATT diode has been studied through computer simulation considering experimental bias current and frequency in the X-band, and the results fit well with the device data (1.6 Omega at 10 GHz) for the flat doping profile. It is further observed that the value of R, decreases from 1.76 to 0.1128 Omega at 10.7 GHz under experimental current density (3.45x10(6) A.m(-2)) and temperature (373K), as the doping profile changes from flat to low-high-low(1hl) type with the incorporation of charge bump. The electric field and the negative resistivity profiles in the depletion layer clearly indicate the advantage of 1hl doping profile on the series resistance as well as on its microwave properties. The analysis also gives an idea on the unison of load conductance of the waveguide and negative conductance of the diode at resonance.

引用

页码：794 / 798

页数：5

共 23 条

[1] Optically induced series resistance and microwave properties of n+np+ GaAs and si IMPATT diode
De, P.
2007 5TH INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2007, : 548 - 551
[2] Effect of current density on the series resistance of SDR (n+np+) silicon IMPATT diode in the X band
De, P
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1998, 168 (02): : 549 - 555
[3] Effect of current density on the series resistance of SDR (n+np+) silicon IMPATT diode in the X band
De, P.
Physica Status Solidi (A) Applied Research, 1998, 168 (02): : 549 - 555
[4] Epitaxial layer induced series resistance and microwave properties of N+NP+Si X band impatt diodes
De, P.
MICROELECTRONICS JOURNAL, 2006, 37 (08) : 786 - 791
[5] Effect of punch through on the microwave series resistance of n+np+ SiIMPATT diodes around the X band
De, P
Chakraborty, PK
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (07) : 859 - 863
[6] Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode
De, P.
CURRENT APPLIED PHYSICS, 2007, 7 (03) : 274 - 280
[7] Effect of punch through on the mm wave properties of Si SDR n+np+ IMPATT diode in the 94 GHz window
Univ of Calcutta, Calcutta, India
Phys Status Solidi A, 2 (765-770):
[8] Computer simulation of series resistance of an SDR silicon IMPATT diode in the X-band
De, PK
INTERNATIONAL JOURNAL OF ELECTRONICS, 1996, 81 (05) : 545 - 550
[9] Effect of charge bump on series resistance and dynamic performance of 4H-SiC Ka-band IMPATT oscillator
Mukherjee, Moumita
Mazumder, Nilratan
Dasgupta, Arindam
2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2, 2007, : 37 - +
[10] Effect of punch through on the mm wave properties of Si SDR n(+)np(+) IMPATT diode in the 94 GHz window
De, P
Mazumder, N
Roy, SK
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (02): : 765 - 770

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