T-Shaped association of transistors: Modeling of multiple channel lengths and regular associations

被引:0
|
作者
Girardi, A [1 ]
Cortes, FR [1 ]
Conrad, E [1 ]
Bampi, S [1 ]
机构
[1] UFRGS, Informat Inst, BR-91501970 Porto Alegre, RS, Brazil
关键词
MOSFET; associations of transistors; analog design; modeling;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents an analysis of a new type of composite transistor specially suited for the design of analog integrated circuits: the T-shape association of transistors. This association is composed by non-equal size unit transistors arranged in a series-parallel array with common gate, which can substitute the conventional rectangular transistors with advantages in some aspects, such as better high-frequency performance, lower output conductance and layout regularity. Dedicated tools that automatically translate the single transistors into equivalent associations without degradation in the overall circuit specifications guarantee the compatibility with the conventional analog design methodology. Some properties and applications are discussed in this paper. Experimental and simulated characteristics are shown in order to verify the behavior of the association.
引用
收藏
页码:21 / 26
页数:6
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