Soft X-ray emission spectroscopy used for the characterization of a-C and CNx thin films

被引：0

作者：

Nepijko, S. A. ^{[1
]}

Chernenkaya, A. ^{[1
,2
]}

Medjanik, K. ^{[1
]}

Chernov, S. V. ^{[1
]}

Klimenkov, M. ^{[3
]}

Vlasenko, O. V. ^{[4
]}

Petrovskaya, S. S. ^{[5
]}

Odnodvorets, L. V. ^{[4
]}

Zaulichnyy, Ya. V. ^{[6
]}

Schoenhense, G. ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55128 Mainz, Germany

[2] Grad Sch Mat Sci Mainz, D-55128 Mainz, Germany

[3] Karlsruhe Inst Technol, Inst Appl Mat, D-76344 Eggenstein Leopoldshafen, Germany

[4] Sumy State Univ, UA-40007 Sumy, Ukraine

[5] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, UA-03142 Kiev, Ukraine

[6] Natl Tech Univ Ukraine KPI, UA-03056 Kiev, Ukraine

来源：

THIN SOLID FILMS | 2015年 / 577卷

关键词：

Carbon nitride; Thin films; Electron energy loss spectroscopy; Soft X-ray emission spectroscopy; CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-CARBON FILMS; ABSORPTION; DIAMOND; HARD;

D O I：

10.1016/j.tsf.2015.01.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the results of a soft X-ray emission spectroscopy study of a-C and CNx films on a Si (100) substrate. Also for the characterization of the homogeneity in depth of these films electron energy loss spectroscopy measurements with localization better than 4 nm were carried out. In case of CNx films the highest diamond-like modification occurs in the region close to the Si (100) substrate. The film density decreases with increasing distance from the substrate and becomes almost constant in range of thicknesses more than similar to 2 nm. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：109 / 113

页数：5

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