Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes

被引：22
|
作者：
Lin, C. L.
Chen, P. H.
Chan, Chia-Hua
Lee, C. C.
Chen, Chii-Chang
Chang, Jeng-Yang
Liu, C. Y. [1 ]
机构：
[1] Natl Cent Univ, Dept Chem & Mat Engn, Jhongli 32001, Taiwan
[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan
[3] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期
关键词：
D O I：
10.1063/1.2748329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using a micron polystyrene ball array as a template, an Al oxide honeycomb structure was produced on the n-GaN surface of a thin-GaN light-emitting diode (LED). The Al oxide honeycomb structure consists of the networking hexagonal Al oxide nanowall. With the Al oxide honeycomb nanostructure, the total lighting output of thin-GaN LED was enhanced by 35%. The authors believe that the networking nanowall of the Al oxide honeycomb structure acted as a waveguide to extract the light emitted to the outer medium effectively. (c) 2007 American Institute of Physics.
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页数：3
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