Effect of irradiation in SEM on electrical properties of silicon

被引：6
|
作者：
Feklisova, OV
Yakimov, EB
Yarykin, NA
机构：
[1] Inst. of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期
关键词：
deep level transient spectroscopy; energy level; scanning electron microscopy;
D O I：
10.1016/S0921-5107(96)01953-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The defect formation in gold doped n-Si under the irradiation by electrons with the subthreshold energy or light illumination have been studied by the deep level transient spectroscopy (DLTS) technique. The formation of three at least new electrically active defects was observed. It has been shown that E(c)-0.20 energy level is associated with hydrogen-gold complex. Both the treatments used were found to stimulate hydrogen transport in silicon.
引用
收藏
页码：274 / 276
页数：3
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