Extremely large magnetoresistance in boron-doped silicon

被引：91

作者：

Schoonus, J. J. H. M. ^{[1
]}

Bloom, F. L. ^{[1
]}

Wagemans, W. ^{[1
]}

Swagten, H. J. M. ^{[1
]}

Koopmans, B. ^{[1
]}

机构：

[1] Univ Technol, Dept Appl Phys, Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.100.127202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Boron-doped Si-SiO2-Al structures are fabricated to study extremely large magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior, dominated by an autocatalytic process of impact ionization. At low temperatures, the magnetic field postpones the onset of impact ionization to higher electric fields. This results in a symmetric positive MR of over 10 000% at 400 kA/m. Applying a magnetic field leads to an increase of the acceptor level compared to the valence band as deduced by admittance spectroscopy. A macroscopic transport model is introduced to describe how the MR is controlled by voltage, electrode spacing, and oxide thickness.

引用

页数：4

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