Photovoltaic characteristics of a-Si/β-FeSi2/c-Si double heterojunction fabricated by magnetron sputtering

被引：11
|
作者：
Xu, Jiaxiong [1 ]
Yao, Ruohe [1 ]
Geng, Kuiwei [1 ]
机构：
[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 05期
关键词：
BETA-FESI2/SI HETEROJUNCTIONS; SOLAR-CELL; SILICON; FILMS; IRON;
D O I：
10.1116/1.3623739
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A novel beta-FeSi2 solar cell with amorphous-Si/beta-FeSi2/crystalline-Si (a-Si/beta-FeSi2/c-Si) double heterojunction structure was investigated. The c-Si (100) wafers were used as substrate materials. Polycrystalline beta-FeSi2 thin film and a-Si thin film were grown by magnetron sputtering. In dark condition, the a-Si/ b-FeSi2/c-Si heterojunction showed a better rectifying property than that of the beta-FeSi2/crystalline-Si (beta-FeSi2/c-Si) heterojunction. Under air mass 1.5 illumination, the measured conversion efficiency of a-Si/beta-FeSi2/c-Si heterojunction increased by 59.7% compared with that of beta-FeSi2/c-Si heterojunction. The effective enhancement of photovoltaic performance was ascribed to the extended built-in electric field distribution and the increased built-in potential. These results illustrated an attractive way to improve the conversion efficiency of beta-FeSi2 solar cells by using the double heterojunction. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3623739]
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页数：4
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