Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties

被引：3
|
作者：
Maurer, Claudia [1 ,3 ]
Beyer, Wolfhard [1 ]
Huelsbeck, Markus [1 ]
Breuer, Uwe [2 ]
Rau, Uwe [1 ]
Haas, Stefan [1 ]
机构：
[1] Forschungszentrum Julich, IEK5 Photovolta, Leo Brandt Str, D-52425 Julich, Germany
[2] Forschungszentrum Julich, ZEA3 Analyt, Leo Brandt Str, D-52425 Julich, Germany
[3] Amphos GmbH, Kaiserstr 100, D-52134 Herzogenrath, Germany
来源：
ADVANCED ENGINEERING MATERIALS | 2020年 / 22卷 / 06期
关键词：
amorphous silicon; hydrogen diffusion; laser treatment; SOLAR-CELLS; SPECTROSCOPY; DIFFUSION; DENSITY;
D O I：
10.1002/adem.201901437
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Herein, the application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outdiffusion is analyzed. Moreover, the resulting optoelectronic properties of the amorphous silicon are examined. On a timescale of a few seconds or less, the hydrogen concentration in the near-surface region of the silicon layer can be successfully decreased without major impact on the optoelectronic properties.
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页数：6
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