Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes

被引：0
|
作者：
Smets, Q. [1 ,2 ]
Verhulst, A. S. [1 ]
El Kazzi, S. [1 ]
Mocuta, A. [1 ]
Thean, V. -Y. [1 ]
Heyns, M. M. [1 ,2 ]
机构：
[1] Imec, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] KULeuven, B-3000 Leuven, Belgium
来源：
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年
关键词：
GAP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：251 / 252
页数：2
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