Surface wave plasma production employing high-permittivity discharge tube for material processing

被引:5
|
作者
Fujiwara, K
Okuya, T
Yanagisawa, M
Shindo, H
机构
[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 2591292, Japan
[2] Speedfam Co Ltd, Res & Dev Div, Ayase, Kanagawa 2521123, Japan
关键词
surface wave plasma; permittivity of discharge tube; silicon wafer global planarization; high-density plasma; plasma for Ultra-Large-Scale Integration (ULSI) processes;
D O I
10.1143/JJAP.42.7536
中图分类号
O59 [应用物理学];
学科分类号
摘要
As a novel method of plasma production, microwave-sustained discharge was studied, particularly focusing on the permittivity effect on the axial distributions of the plasma in the discharge column with the two discharge tube materials. In the alumina discharge tube with a high permittivity, the axial distribution of electron density showed to be very localized in the upstream, nearby the microwave launcher, while in the quartz with a low permittivity a high er density region appeared further downstream. This difference in the axial distribution of the electron density could be explained by the behavior of the surface wave. It was stressed that this property could be one of the biggest advantages in its application to material processing on the industrial level, particularly in achieving a low-damage plasma process, such as low-damage silicon etching.
引用
收藏
页码:7536 / 7540
页数:5
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