Optical studies of monocrystalline beta-FeSi2

被引：0
|
作者：
Arushanov, EK
Carles, R
Kloc, C
Butcher, E
Leotin, J
Smirnov, DV
机构：
[1] UNIV CONSTANCE, FAC PHYS, D-78434 CONSTANCE, GERMANY
[2] UNIV TOULOUSE 3, PHYS SOLIDES LAB, F-31062 TOULOUSE, FRANCE
[3] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of transmission, reflection and Raman measurements of beta-FeSi2 single crystals are presented. The temperature dependence of direct band gap is determined in the temperature range 5-300 K. The absorption below the fundamental edge obeys Urbach exponential law. Frequencies and symmetry of 18 IR active aad 15 Raman active phonons were established.
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页码：1013 / 1016
页数：4
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