Effects of stoichiometry in semi-insulating GaAs on optoelectronic devices

被引：0
|
作者：
Chen, NF [1 ]
He, HJ [1 ]
Wang, YT [1 ]
Lin, LY [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA
来源：
ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS | 1996年 / 2897卷
关键词：
GaAs; stoichiometry; optoelectronic devices; dislocations; precipitates;
D O I：
10.1117/12.252942
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：80 / 88
页数：3
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