Photoinduced local lattice distortions in II-VI semiconductors

We present XAFS results in CdTe heavily doped with In which show the presence of a reversible photoinduced local structural change at low temperatures. Results of ab-initio calculations, which show the effect in the local electronic structure caused by the observed local structural change, are also presented. These results imply the presence of a strong local electron-lattice coupling in II-VI semiconductors. This characteristic, not previously recognized, is likely to be the missing component in explaining carrier passivation and other novel electrical properties.