Spontaneous growth and luminescence of Si/SiOx core-shell nanowires
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作者:
Wu, CF
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Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R ChinaChinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Wu, CF
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Qin, WP
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Qin, WP
Qin, GS
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Qin, GS
Zhao, D
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Zhao, D
Zhang, JS
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Zhang, JS
Xu, W
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Xu, W
Lin, HY
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机构:Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
Lin, HY
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[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130022, Peoples R China
Silicon nanowires were prepared by a thermal evaporation Of MoSi2 heating rods under controlled temperature and atmosphere. Transmission electron microscopy and selected area electron diffraction show that the nanowire consists of a crystalline Si core and an amorphous SiOx shell. There exist two major forms of nanowires possessing different morphologies and growth directions, which may indicate that different mechanisms predominate in the growth process. The photoluminescence of the Si/SiOx core-shell nanowires presents two emission bands, around 550 and 600 nm, respectively. (C) 2003 Elsevier B.V. All rights reserved.