Grain boundary dynamics of SiC bicrystals under shear deformation

被引:11
|
作者
Bringuier, Stefan [1 ]
Manga, Venkateswara Rao [1 ]
Runge, Keith [1 ]
Deymier, Pierre [1 ]
Muralidharan, Krishna [1 ]
机构
[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
关键词
Stick-slip; Athermal dislocation climb; Slide-climb; Silicon carbide; Bicrystals; MOLECULAR-DYNAMICS; SILICON-CARBIDE; MECHANICAL-BEHAVIOR; SIMULATION; ZIRCONIA; CERAMICS; FRACTURE; ALUMINA; MOTION;
D O I
10.1016/j.msea.2015.03.022
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The dynamics of SiC grain boundaries under shear are characterized using molecular dynamics simulations. At low-temperatures, low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary. With increasing temperature stick-slip becomes less pronounced due to dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:161 / 166
页数:6
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