Design of a Sub-mW Front-end amplifier for Capacitive BCC Receiver in 65 nm CMOS

被引:0
|
作者
Kazim, Muhammad Irfan [1 ]
Wikner, J. Jacob [1 ]
机构
[1] Linkoping Univ, Div Integrated Circuits & Syst, Dept Elect Engn, SE-58183 Linkoping, Sweden
关键词
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A low power front-end fully differential operational transconductance amplifier (OTA) has been designed in 65 nm CMOS technology which is suitable to receive low data rates upto 300 kbps for capacitive body coupled communication (BCC) channel. The current shunt current mirror OTA topology has been utilized in open loop configuration in the context of digital baseband architecture on the receiver side. The simulated resuts show that OTA achieves unity gain bandwidth (UGBW) of 200 MHz, dc gain of 40 dB, phase margin of 45 degree and rms integrated noise of 130 mu V between 10 kHz to 150 MHz for 1.5 pF load capacitance and power consumption of approximately 250 mu W. The OTA achieves high CMRR and PSRR (due to positive supply) of more than 120 dB at 100 Hz.
引用
收藏
页码:607 / 610
页数:4
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