Carrier dynamics of quantum well bistable lasers

The influence of carrier capture and transport effects on static and dynamic characteristics of multiple quantum well (MQW) bistable lasers are studied using the well barrier hole burning and carrier transport models. In the well barrier hole burning model, the ratio of carrier capture to release time (eta) is varied and the hysterisis width, transient behavior are analyzed. Furthermore, the effect of carrier transport time on the bistable characteristics are also studied. The analyses are done by simulating the equivalent circuit of MQW bistable laser using the circuit simulation program Pspice. The hysterisis width is found to increase with an increase in eta and transport time. In the transient simulation, increased turn on delay is observed in the case of a higher value of eta. Larger transport time also results in delayed output response.