Texture analysis of GaAs nanowires

被引：0
|
作者：
Jarvis, V. [2 ,3 ]
Britten, J. F. [2 ,3 ]
LaPierre, R. R. [1 ]
机构：
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] McMaster Univ, Dept Chem, Hamilton, ON L8S 4L7, Canada
[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4L7, Canada
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 02期
基金：
加拿大自然科学与工程研究理事会;
关键词：
SOLAR-CELLS; NANOSTRUCTURES; PHOTOVOLTAICS;
D O I：
10.1088/0268-1242/26/2/025014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The technique of texture analysis by x-ray diffraction is demonstrated for GaAs nanowires grown by the vapor-liquid-solid process in a gas source molecular beam epitaxy system. This technique allows simultaneous and facile determination of nanowire growth direction and crystal structure over large sample areas and with improved statistics relative to scanning electron microscopy.
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收藏
页数：5
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