Impedance and modulus analysis of double perovskite Pb2BiVO6

被引：36
|
作者：
Parida, R. K. [1 ]
Pattanayak, D. K. [2 ]
Parida, B. N. [3 ]
机构：
[1] Siksha O Anusandahan Univ, Inst Tech Educ & Res, Dept Phys, Multifunct Mat Res Lab, Bhubaneswar, Orissa, India
[2] GIET, Dept Phys, Gunupur 765022, Odisha, India
[3] BTAD, Cent Inst Technol, Dept Basic Sci Phys, Kokrajhar 783370, Assam, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 22期
关键词：
ELECTRICAL-PROPERTIES; CERAMICS;
D O I：
10.1007/s10854-017-7581-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The member of double perovskite family Pb2BiVO6 was synthesized by a moderate temperature (similar to 700 degrees C) by solid-state route. The room temperature X-ray diffraction pattern of the sample confirms the formation of a single phase new compound. The scanning electron microscope image of the studied compound clearly shows the grains are uniformly distributed with minimal voids. Impedance, modulus and conductivity properties of the compound exhibits a strong correlation with the micro-structure and resistive properties of the material. The electrical transport properties of the material show the existence of non-exponential-type of conductivity relaxation in the material.
引用
收藏
页码：16689 / 16695
页数：7
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