Investigation of Relaxation in Quantum Dot Ensembles in Thin Semiconductor Films by Photon-Echo Technique

被引:1
|
作者
Popov, I. I. [1 ]
Vashurin, N. S. [1 ]
Putilin, S. E. [2 ]
Stepanov, S. A. [3 ]
Sushentsov, N. I. [1 ]
机构
[1] Volga State Univ Technol, Yoshkar Ola 424000, Republic Of Mar, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
[3] Mari State Univ, Yoshkar Ola 424001, Republic Of Mar, Russia
关键词
ZNO;
D O I
10.3103/S1541308X1502003X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.
引用
收藏
页码:101 / 104
页数:4
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