Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

被引:4
|
作者
Shi Wei [1 ]
Ma Xiang-Rong [1 ,2 ]
机构
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
[2] Xinjiang Normal Univ, Inst Phys & Elect Enginerting, Urumqi 830054, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1088/0256-307X/28/12/124201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5 x 10(4) s.cm(-3) <= n(0)/f <= 3 x 10(5) s.cm(-3) and n(0) L >= 10(13) cm(-2) must be met in the switch, with n(0) being carrier concentration and.. the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
    Ma Xiangrong
    Shi Wei
    Ji Weili
    Xue Hong
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (12)
  • [2] Peculiar Photoconductivity in High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch
    Yuan, Jianqiang
    Xie, Weiping
    Liu, Hongwei
    Liu, Jinfeng
    Li, Hongtao
    Wang, Xinxin
    Jiang, Weihua
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2010, 38 (12) : 3460 - 3463
  • [3] Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
    马湘蓉
    施卫
    纪卫莉
    薛红
    半导体学报, 2011, (12) : 80 - 85
  • [4] Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch
    崔海娟
    杨宏春
    徐军
    杨宇明
    杨子贤
    Chinese Physics B, 2017, (01) : 497 - 501
  • [5] Transient thermal effect of semi-insulating GaAs photoconductive switch
    Shi Wei
    Ma Xiang-Rong
    Xue Hong
    ACTA PHYSICA SINICA, 2010, 59 (08) : 5700 - 5705
  • [6] Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch
    Cui, Hai-Juan
    Yang, Hong-Chun
    Xu, Jun
    Yang, Yu-Ming
    Yang, Zi-Xian
    CHINESE PHYSICS B, 2017, 26 (01)
  • [7] 30 kV and 3 kA semi-insulating GaAs photoconductive semiconductor switch
    Shi, Wei
    Tian, Liqiang
    Liu, Zheng
    Zhang, Linqing
    Zhang, Zhenzhen
    Zhou, Liangji
    Liu, Hongwei
    Xie, Weiping
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [8] Characteristics of photoconductivity oscillation in semi-insulating GaAs photoconductive semiconductor switches
    Shi Wei
    Xue Hong
    Ma Xiang-Rong
    ACTA PHYSICA SINICA, 2009, 58 (12) : 8554 - 8559
  • [9] Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN
    Suproniuk, Marek
    Piwowarski, Karol
    Perka, Bogdan
    Kaminski, Pawel
    Kozlowski, Roman
    Teodorczyk, Marian
    ELEKTRONIKA IR ELEKTROTECHNIKA, 2019, 25 (04) : 36 - 39
  • [10] Research on a Novel High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch
    Luan Chongbiao
    Feng Yuanwei
    Huang Yupeng
    Li Hongtao
    Li Xiqin
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2016, 44 (05) : 839 - 841