Island nucleation and growth on reconstructed GaAs(001) surfaces

被引：135
|
作者：
Itoh, M [1 ]
Bell, GR
Avery, AR
Jones, TS
Joyce, BA
Vvedensky, DD
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.81.633
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The initial stages of homoepitaxy on GaAs(001) are studied with atomic-resolution scanning tunneling microscopy and Monte Carlo simulations that include the zinc blende structure of GaAs, the (2 x 4) reconstruction of the (001) surface, and the kinetics of As-2 incorporation. The reconstruction is found to favor nucleation on the top-layer arsenic dimers and to cause small islands to be unstable until they adopt the local (2 x 4) structure.
引用
收藏
页码：633 / 636
页数：4
相关论文
共 50 条
  • [1] RHEED study of reconstructed GaAs(001) surfaces
    Dabrowska-Szata, M
    APPLIED CRYSTALLIGRAPHY, 2004, : 316 - 319
  • [2] REFLECTANCE ANISOTROPY OF RECONSTRUCTED GAAS(001) SURFACES
    MORRIS, SJ
    BASS, JM
    MATTHAI, CC
    MILMAN, V
    PAYNE, MC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2684 - 2688
  • [3] Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4)
    Vvedensky, DD
    Itoh, M
    Bell, GR
    Jones, TS
    Joyce, BA
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 56 - 61
  • [4] Theoretical Modeling of Indium Adatoms on Reconstructed GaAs(001) and AlAs(001) Surfaces
    Roldugin, V. A.
    Soldatov, M. A.
    NANOBIOTECHNOLOGY REPORTS, 2024, 19 (02) : 225 - 229
  • [5] Kinetics of two-dimensional island nucleation on reconstructed surfaces
    Filimonov, Sergey N.
    Hervieu, Yuri Yu.
    PHYSICAL REVIEW B, 2012, 85 (04)
  • [6] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES
    MASSIES, J
    LINH, NT
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) : 25 - 38
  • [7] Nucleation and growth of islands on GaAs surfaces
    Avery, AR
    Dobbs, HT
    Holmes, DM
    Joyce, BA
    Vvedensky, DD
    PHYSICAL REVIEW LETTERS, 1997, 79 (20) : 3938 - 3941
  • [8] Species intermixing and phase transitions on the reconstructed (001) surfaces of GaAs and InAs
    Bell, GR
    Belk, JG
    McConville, CF
    Jones, TS
    PHYSICAL REVIEW B, 1999, 59 (04): : 2947 - 2955
  • [9] Nucleation and island growth kinetics on reconstructing surfaces
    Kuzovkov, VN
    Kortlüke, O
    von Niessen, W
    PHYSICAL REVIEW LETTERS, 1999, 83 (08) : 1636 - 1639
  • [10] Energetic, electronic, and magnetic properties of Mn pairs on reconstructed (001) GaAs surfaces
    Birowska, Magdalena
    Sliwa, Cezary
    Majewski, Jacek A.
    PHYSICAL REVIEW B, 2017, 95 (11)
12345