Quasiballistic transport in HgTe quantum-well nanostructures

被引：26
|
作者：
Daumer, V [1 ]
Golombek, I [1 ]
Gbordzoe, M [1 ]
Novik, EG [1 ]
Hock, V [1 ]
Becker, CR [1 ]
Buhmann, H [1 ]
Molenkamp, LW [1 ]
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 07期
关键词：
All Open Access; Green;
D O I：
10.1063/1.1602170
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 mum. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment. (C) 2003 American Institute of Physics.
引用
收藏
页码：1376 / 1378
页数：3
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