SPICE model of the resonant-tunnelling diode

被引：18
|
作者：
Brown, ER
McMahon, OB
Mahoney, LJ
Molvar, KM
机构：
[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington, MA 02173-9108
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 10期
关键词：
resonant tunnelling devices; semiconductor diodes; SPICE;
D O I：
10.1049/el:19960576
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A SPICE3 model is developed for the resonant-tunnelling diode thar combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation-for the incoherent, or excess, current at bias voltages beyond the valley. The model is designed for type-I RTDs, such as GaAs/AlGaAs structures, and a fitting procedure is developed to derive the parameters of the model From the experimental current/voltage curve.
引用
收藏
页码：938 / 940
页数：3
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