A novel development technique using ozonated water.

被引：3

作者：

Hayasaki, K ^{[1
]}

Takahashi, R ^{[1
]}

Takeishi, T ^{[1
]}

Ito, S ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2 | 2003年 / 5039卷

关键词：

development; CD variation; organic particle; KrF resist process; surface treatment; ozonated water; hydrogenated water;

D O I：

10.1117/12.485068

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two kinds of development processes were investigated. One is two-step development in which surface treatment using ozonated water was employed between the two steps of the development. The other is development in which ozonated water and hydrogenated water were employed in the pre-treatment step and the post-treatment step. The above-mentioned processes were applied to KrF resist process of 130nm generation. By pre-treatment using ozonated water and two-step development using ozonated water in inter-treatment, the shot-to-shot CD variation of isolated line (line width = 180nm) and the intra-shot variation were improved from 6.6nm to 4.4nm and from 13.5nm to 8.6nm, respectively. And the total variation was greatly improved from 15.0nm to 8.6nm. Moreover, the number of defects was greatly decreased by post-treatment using ozonated water and hydrogenated water continuously.

引用

页码：1248 / 1256

页数：9

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