Growth mechanism of In-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering

被引：14
|
作者：
Lee, S. Y. [1 ]
Choi, K. H. [2 ]
Kang, H. C. [2 ]
机构：
[1] POSTECH, Pohang Accelerator Lab, Pohang 790834, South Korea
[2] Chosun Univ, Dept Mat Sci & Engn, Gwangju 501759, South Korea
来源：
MATERIALS LETTERS | 2016年 / 176卷
关键词：
Ga2O3; nanowire; In-doped; RF powder sputtering; Self-catalytic VLS; GALLIUM OXIDE-FILMS; THIN-FILMS; GA2O3; NANOWIRES; LUMINESCENCE; MORPHOLOGY;
D O I：
10.1016/j.matlet.2016.04.116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the growth mechanism of In-doped beta-Ga2O3 nanowires (NWs) deposited using radio frequency powder sputtering. Although the growth sequence of the doped NWs is similar to that of the undoped beta-Ga2O3 NWs, the formation of self-assembled In clusters is more favorable compared to Ga clusters. Clusters of In act as seeds for initiating the growth of In-doped beta-Ga2O3 NWs through a self catalytic vapor-liquid-solid mechanism, while Ga seeds initiate the growth of undoped beta-Ga2O3 NWs by the same mechanism. We also observed zigzag NWs formed by alternating NW growth directions. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：213 / 218
页数：6
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