High-Power Density, 900-W LLC Converters for Servers Using GaN FETs Toward greater efficiency and power density in 48 V to 6/12 V converters

被引：38
|
作者：
Ahmed, Mohamed H. [1 ]
de Rooij, Michael A. [2 ]
Wang, Jianjing [3 ,4 ]
机构：
[1] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[2] Efficient Power Convers Corp, Applicat Engn, El Segundo, CA USA
[3] Hong Kong Appl Sci & Technol Res Inst, Hong Kong, Peoples R China
[4] Univ Bristol, Bristol, Avon, England
来源：
IEEE POWER ELECTRONICS MAGAZINE | 2019年 / 6卷 / 01期
关键词：
704.1 Electric Components - 712.1 Semiconducting Materials - 723.2 Data Processing and Image Processing - 913.1 Production Engineering;
D O I：
10.1109/MPEL.2018.2886106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The LLC resonant converter can achieve soft switching over a wide operating range, making it a suitable candidate for high-efficiency dc-dc conversion, even at a high output current. We applied enhancement-mode gallium nitride (eGaN) fieldeffect transistor (FET) technology to a 1-MHz, 900-W LLC resonant converter in a fixed 4:1-ratio dc-dc transformer application operating with a 48-12-V conversion suitable for data-center applications. The converter achieves power efficiency and density density exceeding 98% and 1,500 W/ 3 , respectively, with excellent thermal performance. © 2014 IEEE.
引用
收藏
页码：40 / 47
页数：8
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